Due to optimized gate oxide thickness our gate oxide screening is a lot more efficient in comparison with competing SiC MOSFET manufacturers. It has been regarded that Raman scattering spectroscopy is often a powerful tool to characterize SiC crystals non-destructively. We review recent important developments in the use of Raman https://www.facebook.com/permalink.php?story_fbid=pfbid0bmCEXqFvYNJMUmM3q2FWZWS1XLvNWxNHWYwyQzMqiLF5ce44yZouXSMJdeznUkZyl&id=61562415773754&__cft__[0]=AZU7CDEaqmc58Tcxj3z6y67nzie6WO9tFVJ9dpHuJbDLgr6u1e4iO7HCpcSuGkdvHF8HUtM-RT6aOt7I-7HT_6nSodDisN7ByAAafcUkQKTQhSJUWNZY2gHj9oePSI5JTWZZuMv5991ySttpXKrNIgUuG6VBKCS-vpVRvMgkk6j697lcNsBnS7hL-mLfUacU5mk2i-BAtB9ej_AuUAmcIp7B&__tn__=%2CO%2CP-R